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  2sc4704 silicon npn epitaxial application high frequency amplifier features excellent high frequency characteristics f t = 300 mhz typ high voltage and low output capacitance v ceo = 200 v, cob = 5.0 pf typ suitable for wide band video amplifier complementary pair of 2sa1810 outline 1. emitter 2. collector 3. base to-126 mod 1 2 3
2sc4704 2 absolute maximum ratings (ta = 25c) item symbol ratings unit collector to base voltage v cbo 200 v collector to emitter voltage v ceo 200 v emitter to base voltage v ebo 4v collector current i c 0.2 a collector peak current i c (peak) 0.5 a collector power dissipation p c 1.25 w p c * 1 10 junction temperature tj 150 c storage temperature tstg C55 to +150 c note: 1. value at t c = 25c. electrical characteristics (ta = 25c) item symbol min typ max unit test conditions collector to base breakdown voltage v (br)cbo 200 v i c = 10 a, i e = 0 collector to emitter breakdown voltage v (br)ceo 200 v i c = 1 ma, r be = _ emitter to base breakdown voltage v (br)ebo 4vi e = 10 a, i c = 0 collector cutoff current i cbo 10av cb = 160 v, i e = 0 dc current transfer ratio h fe * 1 60 200 v ce = 5 v, i c = 10 ma base to emitter voltage v be 1.0 v v ce = 5 v, i c = 30 ma collector to emitter saturation voltage v ce (sat) 1.0 v i c = 30 ma, i b = 3 ma gain bandwidth product f t 200 300 mhz v ce = 20 v, i c = 30 ma collector output capacitance cob 5.0 pf v cb = 30 v, i e = 0, f = 1 mhz note: 1. the 2sc4704 is grouped by h fe and its specification is as follows. bc 60 to 120 100 to 120
2sc4704 3 0 150 100 50 case temperature t c ( c) collector power dissipation pc (w) maximum collector dissipation curve 4 2 8 6 10 12 0.01 0.02 0.05 0.1 0.5 1.0 0.2 collector to emitter voltage v ce (v) collector current i c (a) 10 20 50 100 200 500 1,000 area of safe operation 1 shot pulse ta = 25 c pw = 10 ms dc operation (t c = 25 c) collector to emitter voltage v ce (v) collector current i c (ma) 0 typical output characteristics 246810 40 80 120 160 200 p c = 1.25 w i b = 0 0.2 ma 0.4 2.0 0.6 0.8 1.0 1.2 1.4 1.6 1.8 10 20 100 200 500 1,000 50 collector current i c (ma) dc current transfer ratio h fe 1 2 5 10 20 50 100 200 dc current transfer ratio vs. collector current v ce = 5 v pulse t c = 75 c ?5 c 25 c
2sc4704 4 0.01 0.02 0.1 0.2 1.0 0.5 0.05 collector current i c (ma) collector to emitter saturation voltage v ce (sat) (v) 1 2 5 10 20 50 100 200 collector to emitter saturation voltage vs. collector current l c /l b = 10 pulse t c = 75 c 25 c ?5 c base to emitter voltage v be (v) collector current i c (ma) typical transfer characteristics 1 2 5 10 20 50 100 200 0.1 0.2 0.5 1.0 2.0 5.0 v ce = 5 v pulse t c = 75 c 25 c ?5 c 10 20 50 100 200 500 1,000 collector current i c (ma) gain bandwidth product f t (mhz) 1 2 5 10 20 50 100 200 gain bandwidth product vs. collector current v ce = 20 v t c = 25 c 1.0 2 5 10 20 50 100 collector to base voltage v cb (v) collector output capacitance c ob (pf) 1.0 2 5 10 20 50 100 collector output capacitance vs. collector to base voltage i e = 0 f = 1 mhz
2sc4704 5 when using this document, keep the following in mind: 1. this document may, wholly or partially, be subject to change without notice. 2. all rights are reserved: no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without hitachis permission. 3. hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the users unit according to this document. 4. circuitry and other examples described herein are meant merely to indicate the characteristics and performance of hitachis semiconductor products. hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. no license is granted by implication or otherwise under any patents or other rights of any third party or hitachi, ltd. 6. medical applications: hitachis products are not authorized for use in medical applications without the written consent of the appropriate officer of hitachis sales company. such use includes, but is not limited to, use in life support systems. buyers of hitachis products are requested to notify the relevant hitachi sales offices when planning to use the products in medical applications. hitachi, ltd. semiconductor & ic div. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100, japan tel: tokyo (03) 3270-2111 fax: (03) 3270-5109 for further information write to: hitachi america, ltd. semiconductor & ic div. 2000 sierra point parkway brisbane, ca. 94005-1835 u s a tel: 415-589-8300 fax: 415-583-4207 hitachi europe gmbh electronic components group continental europe dornacher stra? 3 d-85622 feldkirchen m?nchen tel: 089-9 91 80-0 fax: 089-9 29 30 00 hitachi europe ltd. electronic components div. northern europe headquarters whitebrook park lower cookham road maidenhead berkshire sl6 8ya united kingdom tel: 0628-585000 fax: 0628-778322 hitachi asia pte. ltd. 16 collyer quay #20-00 hitachi tower singapore 0104 tel: 535-2100 fax: 535-1533 hitachi asia (hong kong) ltd. unit 706, north tower, world finance centre, harbour city, canton road tsim sha tsui, kowloon hong kong tel: 27359218 fax: 27306071


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